Microelectronics Products
Northrop Grumman’s microelectronics foundries maintains a wide range of processes for our customers. We offer several full feature facilities with state-of-the-art design capabilities, multiple processing nodes, electrical testing, environmental and QCI screening and failure analysis.
Our foundry services create Silicon Mixed-signal, Analog, or Digital ASIC’s; GaAs or GaN Compound semiconductor MMIC’s; or Power Transistors in Silicon or Silicon Carbide. Our standard products that are available encompass Radiation Hardened Non-Volatile Memories and Multiplexers, along with Bipolar RF Power Transistors.
Silicon Technology
For more than 50 years, ATL has utilized unique materials and processes along with novel device technologies to create innovative mixed signal microelectronics. We have trusted capabilities for design, wafer fabrication, test, and assembly that allow us to deliver the exquisite products that meet a broad range of system requirements.
| Product | Status | Voltage | Applications | Technology | PDK |
|---|---|---|---|---|---|
| L-Band | Production | - / 50 | Power Transistors for Pulsed Radar / Communications | Silicon NPN Microwave Power | Yes |
| S-Band | Production | - / 45 | 100 krads | Power Transistors for Pulsed Radar / Communications | Yes |
| CCD | Production | 10/12 | Visible Image Sensors | Indium Tin Oxide CCDs with 4um CMOS 8V CCD Input Drive | Yes |
| PCBLVRH | Production | 10/10 | Smart Power Control (Regulators, Fault Isolators) | Rad Hard 10V BiCMOS. No PNP Transistors Used | Yes |
| PCBMVRH | Production | 15/15 | Smart Power Control (Regulators, Fault Isolators) | Rad Hard 15V BiCMOS. No PNP Transistors Used | Yes |
| PCB60 | Production | 15/60 | Regulators for GaN Devices | 60V BiCMOS | Yes |
| PCB40RH | Pre-Production | 15/40 | Analog Multiplexers, Analog Switches | 100K Rad Hard 40V CMOS and Trench Isolation | Yes |
| CMS8 | Production | 5/5 | SONOS FPGAs, CMOS ASICs, 1M EEPROM | Rad Hard 0.8um CMOS with Nonvolatile Memory | Yes |
| CMS5 | Production | 3.3/5 | CMOS ASICs | Rad Hard 0.5um CMOS | Yes |
Compound Technology
ATL’s capabilities in GaAs, GaN, and SiC materials create trusted, high performance, specialized microelectronics for numerous RF and power applications for systems. Ongoing development in GaN and other wide band gap materials continue to push the boundaries of performance.
| Name | Status | Voltage | Applications | Technology | PDK |
|---|---|---|---|---|---|
| L-Band | Production | - / 50 | Power Transistors for Pulsed Radar / Communications | Silicon NPN Microwave Power | Yes |
| S-Band | Production | - / 45 | 100 krads | Power Transistors for Pulsed Radar / Communications | Yes |
| CCD | Production | 10/12 | Visible Image Sensors | Indium Tin Oxide CCDs with 4um CMOS 8V CCD Input Drive | Yes |
| PCBLVRH | Production | 10/10 | Smart Power Control (Regulators, Fault Isolators) | Rad Hard 10V BiCMOS. No PNP Transistors Used | Yes |
| PCBMVRH | Production | 15/15 | Smart Power Control (Regulators, Fault Isolators) | Rad Hard 15V BiCMOS. No PNP Transistors Used | Yes |
| PCB60 | Production | 15/60 | Regulators for GaN Devices | 60V BiCMOS | Yes |
| PCB40RH | Pre-Production | 15/40 | Analog Multiplexers, Analog Switches | 100K Rad Hard 40V CMOS and Trench Isolation | Yes |
| CMS8 | Production | 5/5 | SONOS FPGAs, CMOS ASICs, 1M EEPROM | Rad Hard 0.8um CMOS with Nonvolatile Memory | Yes |
| CMS5 | Production | 3.3/5 | CMOS ASICs | Rad Hard 0.5um CMOS | Yes |
Mixed Signal Radiation
ATL has the specialized processes that allow us to produce microelectronics that can survive the harshest radiation environments. Our space-level qualified products are utilized on numerous space payloads.
| Product | Status | Voltage | Estimated Radiation Hardness | Comments |
|---|---|---|---|---|
| PCBLVRH | Production | 10/10 | 500 krads | Rad Hard 10V BiCMOS |
| PCBMVRH | Production | 15/15 | 100 krads | Rad Hard 15V BiCMOS |
| PCB40RH | Pre-Production | 15/40 | >300 krads | Rad Hard 40V CMOS for Analog MUXes |
| PCB60 | Production | 15/60 | 30-50 krads | 60V BiCMOS |
| CMS8 | Production | 5/5 | >300 krads | Rad Hard 0.8um CMOS with Nonvolatile Memory |
| CMS5 | Production | 3.3/5 | >300 krads | Rad Hard 0.5um CMOS |
Amplifiers
Power Amplifiers
| Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | PSat (dBm) | Availability |
|---|---|---|---|---|---|---|
| APH668 | GaAs HEMT High Power Amplifier | 71 - 76 | 19 | TBD | 28 | Stock |
| APH670 | GaAs HEMT Medium Power Amplifier | 71 - 76 | 21 | TBD | 25 | Stock |
| APH667 |
GaAs HEMT High Power Amplifier | 81 - 86 | 17 | TBD | 25.5 | Stock |
| APH669 | GaAs HEMT Medium Power Amplifier | 81 - 86 | 16 | 20 | 23.5 | Stock |
| APH482 | HEMT High Power Amplifier | 92 - 96 | 7.5 | 22 | 25 | Stock |
| APH631 | HEMT Power Amplifier | 92 - 96 | 23 | 15 | 18 | Stock |
| APH635 | HEMT Power Amplifier | 92 - 95 | 17 | 20 | 22 | Stock |
GaN Power Amplifiers
| Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | Psat (dBm) | Form | Availability |
|---|---|---|---|---|---|---|---|
| APN267 | GaN HEMT Distributed Amplifier | 2-18 | 10 | 35 | 38 | Die | Stock |
| APN270 | GaN HEMT Power Amplifier | 9-13.2 | 12 | 39 | 41 | Die | Stock |
| APN252 | GaN HEMT Driver Amplifier | 10-14 | 25.5 | 34 | 38 | Die | Stock |
| APN250 | GaN HEMT Power Amplifier | 10-14 | 13 | 39 | 42 | Die | Stock |
| APN226 | GaN HEMT Power Amplifier | 13-16 | 20 | 36 | 39.5 | Die | Stock |
| APN232 | GaN HEMT Power Amplifier | 13.5-15.5 | 13 | 38.5 | 42 | Die | Stock |
| APN237 | GaN HEMT Dual Channel Power Amplifier | 13.5-15.5 | 12.5 | 40.5 | 44 | Die | Stock |
| APN279 | GaN HEMT Power Amplifier | 16-20.8 | 17 | 39.5 | 42.5 | Die | Stock |
| APN187 | GaN HEMT Power Amplifier | 17-22 | 17 | 40 | 42 | Die/Tab | Stock |
| APN149 | GaN HEMT Power Amplifier | 18-23 | 20 | 38 | 39 | Die/Tab | Stock |
| APN243 | GaN HEMT Power Amplifier | 23-28 | 20 | 38 | 40.5 | Die | Stock |
| APN244 | GaN HEMT Power Amplifier | 23-28 | 21 | 37 | 39 | Die | Stock |
| APN228 | GaN HEMT Power Amplifier | 27-32 | 19.5 | 39 | 41.2 | Die/Tab | Stock |
| APN229 | GaN HEMT Power Amplifier | 27-32 | 20 | 17 | 39 | Die/Tab | Stock |
| APN292 | GaN HEMT Power Amplifier | 27-30 | 20 | 42 | 45.5 | Die | Stock |
| APN311 | GaN HEMT Power Amplifier | 27-31 | 20 | 43 | 45 | Die | Stock |
| APN173 | GaN HEMT Power Amplifier | 34-36 | 19.5 | TBD | 37.5 | Die | Stock |
| APN236 | GaN HEMT Power Amplifier | 34.5-35.5 | 16 | 38 | 40 | Die | Stock |
| APN167 | GaN HEMT Power Amplifier | 43-46 | 20 | 35.5 | 38.5 | Die | Stock |
| APN318 | GaN HEMT Power/Driver Amplifier | 47.2-51.4 | 15 | - | 40 | Die | Pre-Production |
| APN319 | GaN HEMT Power/Driver Amplifier | 47.2-51.4 | 16 | - | 37 | Die | Pre-Production |
| APN352 | GaN HEMT Power/Driver Amplifier | 47-51 | 15.5 | 40 | 40.5 | Die | Stock |
| APN353 | GaN HEMT Power/Driver Amplifier | 47-51 | 14 | 37.5 | 39 | Die | Stock |
Low Noise Amplifiers
| Part | Description | Frequency (GHz) | Gain (dB) | NF (dB) | P1dB (dBm) | Availability |
|---|---|---|---|---|---|---|
| ALP302_0 | InP HEMT Low Noise Amplifier | 17.2 - 21.2 | 33 | 0.8 | Stock | |
| ALP302_A | InP HEMT Low Noise Amplifier | 17.2 - 21.2 | 32.5 | 0.8 | Stock | |
| ALP291 | InP HEMT Low Noise Amplifier | 71 - 86 | 29 | 2.7 | 3 | Stock |
| ALP275 | InP HEMT Low Noise Amplifier | 71 - 96 | > 26 | 3 | 4 | Stock |
| ALP280 | InP HEMT Low Noise Amplifier | 80 - 100 | 29 | 2 | 3 | Stock |
| ALP283 | InP HEMT Low Noise Amplifier | 80 - 100 | 29 | 2.5 | 3 | Stock |
| ALH495 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 18 | 4.3 | 3 | Stock |
| ALH495 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 18 | 4.8 | 3 | Stock |
| ALH497 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 17 | 4.2 | 0 | Stock |
| ALH497 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 17 | 4.9 | 0 | Stock |
| ALH503 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 16 | 4.2 | 0 | Stock |
| ALH503 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 16 | 4.9 | 0 | Stock |
| ALH504 (-LN) | HEMT Low Noise Amplifier | 82 - 102 | 18 | 4.1 | 3 | Stock |
| ALH504 (-GB) | HEMT Gain Block Amplifier | 82 - 102 | 18 | 4.8 | 3 | Stock |
| ALP292 | InP HEMT Low Noise Amplifier | 90 - 112 | 30 | 3 | 3 | Stock |
| ALH394 | HEMT Low Noise Amplifier | 92 - 96 | 17 | 5 | 5 | Stock |
Mixers
| Part | Description | RF Freq (GHz) | LO Freq (GHz) | IF Freq (GHz) | CL (dB) | Availability |
|---|---|---|---|---|---|---|
| MDJ183 | InP Schottky Diode Mixer | 17 - 32 | 17 - 32 | DC-10 | 8 | Pre-Production |
| MDJ169 | InP Schottky Diode Mixer | 24 - 44 | 24 - 44 | DC-15 | 7.5 | Pre-Production |
| MDJ178 | InP Schottky Diode Mixer | 37 - 61 | 37 - 61 | DC-15 | 8.5 | Pre-Production |
| MDJ187 | InP Schottky Diode Mixer | 40 - 76 | 40 - 76 | DC-25 | 9 | Pre-Production |
| MBH100 | HEMT Schottky Diode Mixer | 91 - 99 | 91 - 99 | DC-3 | 12 | Stock |
| MDJ191 | InP Schottky Diode Mixer | 92 - 97 | 92 - 97 | DC-20 | 8.5 | Pre-Production |